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Influence of ambient oxygen pressure on the preferred orientation, microstructures, and dielectric properties of (Ba1-xSrx)TiO3 thin films with compositionally graded structures

Author
ZHU, X.-H1 2 ; CHAN, H. L.-W2 ; CHOY, C.-L2 ; WONG, K.-H2
[1] National Laboratory of Solid State Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
[2] Department of Applied Physics and Smart Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong-Kong
Source

Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 3, pp 591-595, 5 p ; ref : 26 ref

ISSN
0947-8396
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Springer, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Baryum titanate Constante diélectrique Couche mince Diffraction RX Dépôt laser pulsé Microscopie électronique balayage Microstructure Orientation préférentielle Procédé dépôt Propriété diélectrique Strontium titanate 7755 Composé minéral Métal transition composé
Keyword (en)
Barium titanates Permittivity Thin films XRD Pulsed laser deposition Scanning electron microscopy Microstructure Preferred orientation Deposition process Dielectric properties Strontium titanates Inorganic compounds Transition element compounds
Keyword (es)
Orientación preferencial Procedimiento revestimiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70G Dielectrics, piezoelectrics, and ferroelectrics and their properties / 001B70G55 Dielectric thin films

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16450137

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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