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Analytical model of high-frequency noise spectrum in Schottky-Barrier diodes

Author
SHIKTOROV, P1 ; STARIKOV, E1 2 ; GRUZINSKIS, V1 ; REGGIANI, L3 ; VARANI, L4 ; VAISSIERE, J. C4
[1] Semiconductor Physics Institute, Vilnius 2600, Lithuania
[2] CEM2-Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507), Montpellier 3409, France
[3] INFM-National Nanotechnology Laboratory, Dipartimento di Ingegneria de'll Innovazione, Università di Lecce, Lecce 73100, Italy
[4] CEM2-Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507), Montpellier 34095, France
Source

IEEE electron device letters. 2005, Vol 26, Num 1, pp 2-4, 3 p ; ref : 8 ref

CODEN
EDLEDZ
ISSN
0741-3106
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
High-frequency noise Schottky-barrier diodes terahertz (THz) radiation
Keyword (fr)
Champ autocohérent Diode barrière Schottky Etude comparative Haute fréquence Méthode Monte Carlo Méthode analytique Spectre bruit Spectre fréquence Simulation numérique
Keyword (en)
Self-consistent field Schottky barrier diode Comparative study High frequency Monte Carlo method Analytical method Noise spectrum Frequency spectrum Numerical simulation
Keyword (es)
Diodo barrera Schottky Estudio comparativo Alta frecuencia Método Monte Carlo Método analítico Espectro ruido Espectro frecuencia Simulación numérica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16458753

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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