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On the effect of crystallographic orientation on ductile material removal in silicon

Author
O'CONNOR, Brian P1 ; MARSH, Eric R2 ; COUEY, Jeremiah A2
[1] Aerotech, Inc., 101 Zeta Drive, Pittsburgh, PA 15238, United States
[2] The Pennsylvania State University, 21 Reber Building, University Park, PA 16802, United States
Source

Precision engineering. 2005, Vol 29, Num 1, pp 124-132, 9 p ; ref : 19 ref

CODEN
PREGDL
ISSN
0141-6359
Scientific domain
Mechanical engineering; Metallurgy, welding
Publisher
Elsevier Science, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Critical chip thickness Crystallographic orientation Diamond turning Silicon
Keyword (fr)
Angle contact Diamant Direction cristallographique Erosion Etude expérimentale Matériau ductile Microscopie optique Monocristal Mécanique précision Métrologie surface Outil diamant Planéité Silicium Usinage
Keyword (en)
Contact angle Diamond Crystallographic direction Erosion Experimental study Ductile material Optical microscopy Single crystal Precision engineering Surface metrology Diamond tool Flatness Silicon Machining
Keyword (es)
Angulo contacto Diamante Dirección cristalográfica Erosión Estudio experimental Material dúctil Microscopía óptica Monocristal Mecánica precisión Metrología superficie Diamante Planeidad Silicio Mecanizado
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D12 Mechanical engineering. Machine design / 001D12I Precision engineering, watch making

Discipline
Mechanical engineering. Mechanical construction. Handling
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16459149

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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