Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures
- Author
- YUANCHENG CHANG1 ; TONG, K. Y1 ; SURYA, C1
[1] Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Hong-Kong - Source
Semiconductor science and technology. 2005, Vol 20, Num 2, pp 188-192, 5 p ; ref : 22 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Autocohérence Caractéristique courant tension Composé minéral Composé ternaire Densité électron Discontinuité bande Effet température Equation Poisson Gallium nitrure Haute température Hétérostructure Polarisation Semiconducteur Simulation numérique Transistor mobilité électron élevée Al Ga N AlGaN Ga N GaN
- Keyword (en)
- Aluminium nitrides Self consistency IV characteristic Inorganic compounds Ternary compounds Electron density Band offset Temperature effects Poisson equation Gallium nitrides High temperature Heterostructures Polarization Semiconductor materials Digital simulation High electron mobility transistors
- Keyword (es)
- Autocoherencia Discontinuidad banda Alta temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Electronics Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16461498
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/20/2/016 
https://dx.doi.org/10.1088/0268-1242/20/2/016
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