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Prevention method of a notching caused by surface charging in silicon reactive ion etching

Author
KIM, Che-Heung1 2 ; KIM, Yong-Kweon1
[1] School of Electrical Engineering and Computer Science, Seoul National University, Seoul, Korea, Republic of
[2] Samsung Advanced Institute of Technology, Mt 14-1, Nongseo-ri Giheung-eup, Yongin-si, Gyeonggi-do 449-712, Korea, Republic of
Source

Journal of micromechanics and microengineering (Print). 2005, Vol 15, Num 2, pp 358-361, 4 p ; ref : 14 ref

ISSN
0960-1317
Scientific domain
Electronics; Mechanical engineering
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Autoalignement Bridage Couche interfaciale Couche sacrificielle Décollement épitaxique Endommagement Gravure ionique réactive Photorésist Porte pièce Silicium Transducteur interdigital Verre 0710C 8540H
Keyword (en)
Self alignment Clamping Interfacial layer Sacrificial layer Lift off Damaging Reactive ion etching Photoresist Work holder Silicon Interdigital transducer Glass
Keyword (es)
Autoalineación Apriete Capa interfacial Capa sacrificial Desprendimiento epitáxico Deterioración Grabado iónico reactivo Fotorresistencia Portapieza Silicio Transductor interdigital Vidrio
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G10 Mechanical instruments, equipment and techniques / 001B00G10C Micromechanical devices and systems

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D12 Mechanical engineering. Machine design / 001D12I Precision engineering, watch making

Discipline
Electronics Mechanical engineering. Mechanical construction. Handling Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16482929

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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