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B ion implantation effects on L10 chemical ordering of FePt thin films

Author
AOYAMA, T1 ; SATO, I1 ; ITO, H2 ; ISHIO, S2
[1] TDK Corporation. 462-1 Otai, Saku-shi, Nayano 385-0009, Japan
[2] Akita University, 1-1 Tegatagakuen-machi, Akita 010-8502, Japan
Conference title
Selected papers from the 7th Perpendicular Magnetic Recording Conference (PMRC 2004)
Conference name
PMRC 2004 Perpendicular Magnetic Recording Conference (7 ; Sendai 2004-05-31)
Author (monograph)
HONDA, Naoki (Editor)1
[1] Akita Research Institute of Advanced Technology (AIT), Araya, Akita 010-1623, Japan
Source

Journal of magnetism and magnetic materials. 2005, Vol 287, pp 209-213, 5 p ; ref : 10 ref

CODEN
JMMMDC
ISSN
0304-8853
Scientific domain
Electronics; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
75.50.Ss 75.70.-i Ion implantation Chemical ordering FePt L10
Keyword (fr)
Couche mince Diffraction RX Force coercitive Implantation ion Magnétisme surface Paramètre cristallin Recuit thermique rapide Relation ordre Rugosité 7570R
Keyword (en)
Thin films XRD Coercive force Ion implantation Surface magnetism Lattice parameters Rapid thermal annealing Ordering Roughness
Keyword (es)
Relación orden
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E70 Magnetic properties of surface, thin films and multilayers / 001B70E70R Surface magnetism

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16514703

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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