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An experimental study of carrier heating on channel noise in deep-submicrometer NMOSFETs via body bias

Author
HONG WANG1 ; RONG ZENG1 ; XIUPING LI2
[1] Microelectronic Centre, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
[2] School of Telecommunication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China
Conference name
Radio Frequency Integrated Circuits (RFIC) Symposium (RFIC) Symposium (Fort Worth, TX 2004-06-06)
Source

IEEE transactions on microwave theory and techniques. 2005, Vol 53, Num 2, pp 564-570, 7 p ; ref : 23 ref

CODEN
IETMAB
ISSN
0018-9480
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Author keyword
Hot carriers MOSFETs semiconductor device noise
Keyword (fr)
Etude expérimentale Porteur chaud Réduction bruit Submicromètre Transistor MOSFET
Keyword (en)
Experimental study Hot carrier Noise reduction Submicrometer MOSFET
Keyword (es)
Estudio experimental Portador caliente Reducción ruido Submicrómetro
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16518082

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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