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3-dimensional chip stacking for high-density electronic packaging

Author
TAKAHASHI, Kenji1 ; TANIDA, Kazumasa1 ; UMEMOTO, Mitsuo1 ; KOJIMA, Kazumi1 ; ISHINO, Masakazu2 ; BONKOHARA, Manabu2
[1] Tsukuba Research Center, Association of Super-Advanced Electronic Technologies (ASET), 1-6, Sengen 2-chome, Tsukuba, Ibaraki 305-0047, Japan
[2] Headquarter Office, Association of Super-Advanced Electronic Technologies (ASET)., 10F, Time 24 BLDG, 45, Aomi 2-chome, Koto-ku, Tokyo 135-8073, Japan
Conference title
Copper interconnects, new contact metallurgies/structures, and low-k interlevel dielectrics II (Orlando FL, 12-17 October 2003)
Conference name
Copper interconnects, new contact metallurgies/structures, and low-k interlevel dielectrics (2 ; Orlando FL 2003-10-12)
Author (monograph)
Mathad, G.S (Editor); Rathore, H.S (Editor); Konda, K (Editor); Reidsema-Simpson, C (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 264-269, 6 p ; ref : 14 ref

ISSN
0161-6374
ISBN
1-56677-390-3
Scientific domain
General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Circuit intégré Densité élevée Dépôt électrolytique Essai circuit intégré Fabrication microélectronique Fiabilité Indentation Interconnexion Module élasticité Modèle 3 dimensions Méthode élément fini Oscillateur anneau Packaging électronique Puce à bosses Trou interconnexion
Keyword (en)
Integrated circuit High density Electrodeposition Integrated circuit testing Microelectronic fabrication Reliability Indentation Interconnection Elastic modulus Three dimensional model Finite element method Ring oscillator Electronic packaging Flip-chip Via hole
Keyword (es)
Circuito integrado Densidad elevada Depósito electrolítico Fabricación microeléctrica Fiabilidad Indentación Interconexión Módulo elasticidad Modelo 3 dimensiones Método elemento finito Oscilador anillo Packaging electrónico Agujero interconexión
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A1 Oscillators, resonators, synthetizers

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16524025

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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