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An in-situ FTIR study on palladium displacement reaction for autocatalytic electroless copper deposition

Author
OH, Youn-Jin1 ; CHUNG, Chan-Hwa1
[1] Department of Chemical Engineering, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
Conference title
Copper interconnects, new contact metallurgies/structures, and low-k interlevel dielectrics II (Orlando FL, 12-17 October 2003)
Conference name
Copper interconnects, new contact metallurgies/structures, and low-k interlevel dielectrics (2 ; Orlando FL 2003-10-12)
Author (monograph)
Mathad, G.S (Editor); Rathore, H.S (Editor); Konda, K (Editor); Reidsema-Simpson, C (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 79-87, 9 p ; ref : 15 ref

ISSN
0161-6374
ISBN
1-56677-390-3
Scientific domain
General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Autocatalyse Dépôt par oxydoréduction Fabrication microélectronique In situ Procédé fabrication
Keyword (en)
Autocatalysis Electroless plating Microelectronic fabrication In situ Manufacturing process
Keyword (es)
Autocatálisis Depósito por oxidorreducción Fabricación microeléctrica In situ Procedimiento fabricación
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16524030

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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