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Analytical modeling of a DCFL inverter using normally-off GaAs MESFET's under dark and illuminated conditions

Author
JIT, S1 ; BANDHAWAKAR, Garima1 ; PAL, B. B1
[1] Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi 221005, India
Source

Solid-state electronics. 2005, Vol 49, Num 4, pp 628-633, 6 p ; ref : 13 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier Science, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
DCFL inverter E-MESFET OPFET Photovoltage
Keyword (fr)
Caractéristique transfert Commutation Composé binaire Eclairement Effet photoélectrique Gallium arséniure Modélisation Méthode analytique Onduleur Transistor effet champ barrière Schottky Transistor effet champ As Ga GaAs
Keyword (en)
Transfer characteristic Switching Binary compound Illumination Photoelectric effect Gallium arsenides Modeling Analytical method Inverter Metal semiconductor field effect transistor Field effect transistor
Keyword (es)
Característica transferencia Conmutación Compuesto binario Alumbrado Modelización Método analítico Ondulador Transistor efecto campo barrera Schottky Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16540792

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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