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ESD defect localization and analysis using pulsed OBIC techniques

Author
BEAUCHENE, T1 ; LEWIS, D1 ; TREMOUILLES, D2 ; ESSELY, F1 ; PERDU, P3 ; FOUILLAT, P1
[1] Laboratoire IXL, CNRS UMR 5818, Université Bordeaux 1, 33405 Talence, France
[2] CNES-THALES laboratory, 18 Avenue Edouard Belin, 31401 Toulouse, France
[3] LAAS-CNRS, 31401 Toulouse, France
Conference title
Microelectronics technology and devices SBMICRO 2003 (Sao Paulo, 8-11 September 2003)
Conference name
International symposium on microelectronics technology and devices (18 ; Sao Paulo 2003-09-08)
Author (monograph)
Martino, J.A (Editor); Pavanello, M.A (Editor); Morimoto, N.I (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 156-165, 10 p ; ref : 7 ref

ISSN
0161-6374
ISBN
1-56677-389-X
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Circuit intégré Courant induit Décharge électrostatique Faisceau laser Faisceau optique Intensité faisceau Localisation défaut Modélisation
Keyword (en)
Integrated circuit Induced current Electrostatic discharge Laser beam Optical beam Beam currents Defect localization Modeling
Keyword (es)
Circuito integrado Corriente inducida Haz láser Haz óptico Localización imperfección Modelización
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545681

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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