Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16545707

Export

Selection :

Effect of silicon nitride PECVD growth on AlGaN/GaN HEMT dispersion and breakdown characteristics

Author
FITCH, Robert1 ; GILLESPIE, James1 ; VIA, Dave1 ; AGRESTA, Don1 ; JENKINS, Thomas1 ; JESSEN, Gregg1 ; MOSER, Neil1 ; CRESPO, Antonio1 ; DABIRAN, Amir2 ; OSINSKY, Andrea2
[1] Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, Ohio, United States
[2] SVT Associates, 7620 Executive Drive, Eden Prairie, MN, United States
Conference title
State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
Conference name
Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
Author (monograph)
Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 459-464, 6 p ; ref : 3 ref

ISSN
0161-6374
ISBN
1-56677-419-5
Scientific domain
General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium nitrure Composé binaire Composé ternaire Endommagement Fabrication microélectronique Gallium nitrure Méthode PECVD Passivation Procédé fabrication Silicium nitrure Transistor mobilité électron élevée Al Ga N AlGaN Ga N GaN N Si Si3N4 Si
Keyword (en)
Aluminium nitride Binary compound Ternary compound Damaging Microelectronic fabrication Gallium nitride PECVD Passivation Manufacturing process Silicon nitride High electron mobility transistor
Keyword (es)
Aluminio nitruro Compuesto binario Compuesto ternario Deterioración Fabricación microeléctrica Galio nitruro Pasivación Procedimiento fabricación Silicio nitruro Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545707

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web