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Micro-electromechanical simulation of a CMOS pressure sensor

Author
FRUETT, Fabiano1 ; GARCIA, Vitor1 ; PAVANELLO, Renato2
[1] School of Electrical and Computer Engineering - FEEC, State University of Campinas - UNICAMP Cidade Universitária Zeferino Vaz, P.O. Box 6101, Av. Albert Einstein, 400, 13083-970 Campinas - SP, Brazil
[2] Mechanical Engineering Faculty - FEM, State University of Campinas - UNICAMP, Cidade Universitária Zeferino Vaz, P.O. Box 6101, Av. Albert Einstein, 400, 13083-970 Campinas - SP, Brazil
Conference title
Microelectronics technology and devices SBMICRO 2004 (Porto de Galinhas Beach, 2004)
Conference name
International symposium on microelectronics technology and devices (19 ; 2004)
Author (monograph)
Santos, E.J.P (Editor); Ribas, R.P (Editor); Swart, J (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 101-106, 6 p ; ref : 4 ref

ISSN
0161-6374
ISBN
1-56677-416-0
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Amplificateur différentiel Capteur mesure Capteur pression Circuit électronique Contrainte mécanique Distribution contrainte Effet contrainte Electronique faible puissance Miniaturisation Modélisation Méthode numérique Méthode élément fini Simulation circuit Technologie MOS complémentaire Transistor MOS
Keyword (en)
Differential amplifier Measurement sensor Pressure sensor Electronic circuit Mechanical stress Stress distribution Stress effects Low-power electronics Miniaturization Modeling Numerical method Finite element method Circuit simulation Complementary MOS technology MOS transistor
Keyword (es)
Amplificador diferencial Captador medida Captador presión Circuito electrónico Tensión mecánica Campo restricción Miniaturización Modelización Método numérico Método elemento finito Tecnología MOS complementario Transistor MOS
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G01 Theoretical study. Circuits analysis and design

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A2 Amplifiers

Discipline
Electronics Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545756

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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