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Formation and stability of Ni(Pt)Si/poly-Si layered structure

Author
SANTOS, Regis E1 2 ; DOI, Ioshiaki1 2 ; TEIXEIRA, Ricardo C1 2 ; DINIZ, José A1 2 ; SWART, Jacobus W1 2 ; DOS SANTOS, Sebastiao G3
[1] School of Electrical and Computer Engineering (FEEC), State University of Campinas (UNICAMP), P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil
[2] Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), P.O. Box 6061, CEP 13083-970, Campinas-SP, Brazil
[3] Laboratory of Integrated Systems (LSI), Polytechnic School, University of São Paulo (USP), R. Luciano Gualberto, 158, CEP 05508900, S. Paulo-SP, Brazil
Conference title
Microelectronics technology and devices SBMICRO 2004 (Porto de Galinhas Beach, 2004)
Conference name
International symposium on microelectronics technology and devices (19 ; 2004)
Author (monograph)
Santos, E.J.P (Editor); Ribas, R.P (Editor); Swart, J (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 259-264, 6 p ; ref : 10 ref

ISSN
0161-6374
ISBN
1-56677-416-0
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique électrique Couche interfaciale Couche inversion Microscopie force atomique Microscopie électronique balayage Polycristal Recuit thermique rapide Rugosité Résistivité couche Sonde 4 pointes Structure interface Température recuit Valeur efficace
Keyword (en)
Electrical characteristic Interfacial layer Inversion layer Atomic force microscopy Scanning electron microscopy Polycrystal Rapid thermal annealing Roughness Sheet resistivity Four point probe Interface structure Annealing temperature Root mean square value
Keyword (es)
Característica eléctrica Capa interfacial Capa inversión Microscopía fuerza atómica Microscopía electrónica barrido Policristal Recocido térmico rápido Rugosidad Resistividad capa Sonda 4 puntas Estructura interfaz Temperatura recocido Valor eficaz
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545775

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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