A kinetic model for p-type doping in silicon epitaxy by CVD
- Author
- MEHTA, Bhavesh1 ; MENG TAO1
[1] NanoFAB Center and Department of Electrical Engineering, University of Texas at, Arlington, 500 S. Cooper St., Arlington, Texas 76019, United States - Conference title
- High purity silicon VIII (Honolulu HI, 3-8 October 2004)
- Conference name
- International symposium on high purity silicon (8 ; Honolulu HI 2004-10-03)
- Author (monograph)
- Claeys, C.L (Editor); Watanabe, M (Editor); Falster, R (Editor); Stallhofer, P (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2004, pp 12-22, 11 p ; ref : 31 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-418-7
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition silicium Adsorption Dopage Dépôt chimique phase vapeur Désorption Electronique moléculaire Epitaxie Fabrication microélectronique Modèle cinétique Méthode analytique Nanoélectronique Pression partielle Semiconducteur type p Taux croissance 8540H 8565
- Keyword (en)
- Silicon addition Adsorption Doping Chemical vapor deposition Desorption Molecular electronics Epitaxy Microelectronic fabrication Kinetic model Analytical method Nanoelectronics Partial pressure p type semiconductor Growth rate
- Keyword (es)
- Adición silicio Adsorción Doping Depósito químico fase vapor Desorción Electrónica molecular Epitaxia Fabricación microeléctrica Modelo cinético Método analítico Nanoelectrónica Presión parcial Semiconductor tipo p Tasa crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16545829
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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