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A kinetic model for p-type doping in silicon epitaxy by CVD

Author
MEHTA, Bhavesh1 ; MENG TAO1
[1] NanoFAB Center and Department of Electrical Engineering, University of Texas at, Arlington, 500 S. Cooper St., Arlington, Texas 76019, United States
Conference title
High purity silicon VIII (Honolulu HI, 3-8 October 2004)
Conference name
International symposium on high purity silicon (8 ; Honolulu HI 2004-10-03)
Author (monograph)
Claeys, C.L (Editor); Watanabe, M (Editor); Falster, R (Editor); Stallhofer, P (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 12-22, 11 p ; ref : 31 ref

ISSN
0161-6374
ISBN
1-56677-418-7
Scientific domain
General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Addition silicium Adsorption Dopage Dépôt chimique phase vapeur Désorption Electronique moléculaire Epitaxie Fabrication microélectronique Modèle cinétique Méthode analytique Nanoélectronique Pression partielle Semiconducteur type p Taux croissance 8540H 8565
Keyword (en)
Silicon addition Adsorption Doping Chemical vapor deposition Desorption Molecular electronics Epitaxy Microelectronic fabrication Kinetic model Analytical method Nanoelectronics Partial pressure p type semiconductor Growth rate
Keyword (es)
Adición silicio Adsorción Doping Depósito químico fase vapor Desorción Electrónica molecular Epitaxia Fabricación microeléctrica Modelo cinético Método analítico Nanoelectrónica Presión parcial Semiconductor tipo p Tasa crecimiento
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545829

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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