Anodic behavior of InP: Film growth, porous structures and current oscillations
- Author
- BUCKLEY, D. N1 2 ; O'DWYER, C1 2 ; HARVEY, E1 ; MELLY, T1 2 ; SERANTONI, M1 2 ; SUTTON, D2 ; NEWCOMB, S. B2
[1] Department of Physics, University of Limerick, Ireland
[2] Materials & Surface Science Institute, University of Limerick, Ireland - Conference title
- State-of-the-art program on compound semiconductors XXXVIII = Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003) (en)
- Conference name
- State of the art program on compound semiconductors (38 ; Paris 2003-04-27) = Symposium on wide bandgap semiconductors for photonic and electronic devices and sensors (4 ; Paris 2003-04-27)
- Author (monograph)
- Stokes, E.B (Editor); Fitch, R.C (Editor); Chang, P.C (Editor); Merfeld, D.W (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 48-62, 15 p ; ref : 25 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-349-0
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Anodisation Composé binaire Couche mince Couche superficielle Croissance film Fissure Indium phosphure Matériau poreux In P InP
- Keyword (en)
- Anodizing Binary compound Thin film Surface layer Film growth Crack Indium phosphide Porous material
- Keyword (es)
- Anodización Compuesto binario Capa fina Capa superficial Fisura Indio fosfuro Material poroso
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16545944
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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