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Anodic behavior of InP: Film growth, porous structures and current oscillations

Author
BUCKLEY, D. N1 2 ; O'DWYER, C1 2 ; HARVEY, E1 ; MELLY, T1 2 ; SERANTONI, M1 2 ; SUTTON, D2 ; NEWCOMB, S. B2
[1] Department of Physics, University of Limerick, Ireland
[2] Materials & Surface Science Institute, University of Limerick, Ireland
Conference title
State-of-the-art program on compound semiconductors XXXVIII = Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003) (en)
Conference name
State of the art program on compound semiconductors (38 ; Paris 2003-04-27) = Symposium on wide bandgap semiconductors for photonic and electronic devices and sensors (4 ; Paris 2003-04-27)
Author (monograph)
Stokes, E.B (Editor); Fitch, R.C (Editor); Chang, P.C (Editor); Merfeld, D.W (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 48-62, 15 p ; ref : 25 ref

ISSN
0161-6374
ISBN
1-56677-349-0
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Anodisation Composé binaire Couche mince Couche superficielle Croissance film Fissure Indium phosphure Matériau poreux In P InP
Keyword (en)
Anodizing Binary compound Thin film Surface layer Film growth Crack Indium phosphide Porous material
Keyword (es)
Anodización Compuesto binario Capa fina Capa superficial Fisura Indio fosfuro Material poroso
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545944

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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