Investigation of charge control related performances in double-gate SOI MOSFETs
- Author
- KILCHYTSKA, V1 ; CHUNG, T. M2 ; VAN MEER, H3 4 ; DE MEYER, K3 4 ; RASKIN, J.-P2 ; FLANDRE, D1
[1] Microelectronics aboratory, Université catholique de Louvain, Place du Levant, 3, Louvain-la-Neuve, 1348, Belgium
[2] Microwave Laboratory, Université catholique de Louvain, Place du Levant, 3, Louvain-la-Neuve, 1348, Belgium
[3] IMEC, Kapeldreef 75, Leuven, 3001, Belgium
[4] K.U. Leuven, Kasteelpark Arenberg 10, Leuven, 3001, Belgium - Conference title
- Silicon-on-insulator technology and devices XI (Paris, 28 April - 2 May 2003)
- Conference name
- Silicon-on-insulator technology and devices (11 ; Paris 2003-04-28)
- Author (monograph)
- Celler, G (Editor); Fossum, J (Editor); Gamiz, F (Editor); Izumi, K (Editor); Kim, Y.W (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 225-230, 6 p ; ref : 11 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-375-X
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Evaluation performance Technologie silicium sur isolant Transistor MOSFET
- Keyword (en)
- Performance evaluation Silicon on insulator technology MOSFET
- Keyword (es)
- Evaluación prestación Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16545972
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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