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Investigation of charge control related performances in double-gate SOI MOSFETs

Author
KILCHYTSKA, V1 ; CHUNG, T. M2 ; VAN MEER, H3 4 ; DE MEYER, K3 4 ; RASKIN, J.-P2 ; FLANDRE, D1
[1] Microelectronics aboratory, Université catholique de Louvain, Place du Levant, 3, Louvain-la-Neuve, 1348, Belgium
[2] Microwave Laboratory, Université catholique de Louvain, Place du Levant, 3, Louvain-la-Neuve, 1348, Belgium
[3] IMEC, Kapeldreef 75, Leuven, 3001, Belgium
[4] K.U. Leuven, Kasteelpark Arenberg 10, Leuven, 3001, Belgium
Conference title
Silicon-on-insulator technology and devices XI (Paris, 28 April - 2 May 2003)
Conference name
Silicon-on-insulator technology and devices (11 ; Paris 2003-04-28)
Author (monograph)
Celler, G (Editor); Fossum, J (Editor); Gamiz, F (Editor); Izumi, K (Editor); Kim, Y.W (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 225-230, 6 p ; ref : 11 ref

ISSN
0161-6374
ISBN
1-56677-375-X
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Evaluation performance Technologie silicium sur isolant Transistor MOSFET
Keyword (en)
Performance evaluation Silicon on insulator technology MOSFET
Keyword (es)
Evaluación prestación Tecnología silicio sobre aislante
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16545972

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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