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Physical analysis and modeling of plasma etching mechanism for ULSI application

Author
KANOH, M1 ; ONOUE, S1 ; NISHITANI, K1 ; SHINMURA, T1 ; IYANAGI, K1 ; KINOSHITA, S1 ; TAKAGI, S1
[1] Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa, 235-0017, Japan
Conference title
ULSI process integration III (Paris, 28 April - 2 May 2003)
Conference name
Symposium on ULSI process integration (3 ; Paris 2003-04-28)
Author (monograph)
Claeys, C.L (Editor); Gonzales, F (Editor); Murota, J (Editor); Fazan, P (Editor); Singh, R (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 421-433, 13 p ; ref : 9 ref

ISSN
0161-6374
ISBN
1-56677-376-8
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Circuit ULSI Circuit intégré Conditions opératoires Fabrication microélectronique Gravure ionique réactive Gravure plasma Microscopie électronique balayage Modélisation Rapport aspect Réaction surface Simulation plasma Trou interconnexion
Keyword (en)
ULSI circuit Integrated circuit Process conditions Microelectronic fabrication Reactive ion etching Plasma etching Scanning electron microscopy Modeling Aspect ratio Surface reaction Plasma simulation Via hole
Keyword (es)
Circuito ULSI Circuito integrado Condiciones operatorias Fabricación microeléctrica Grabado iónico reactivo Grabado plasma Microscopía electrónica barrido Modelización Relación dimensional Reacción superficie Agujero interconexión
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546024

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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