Development of high speed 850 nm VCSELS for OC-192 application
- Author
- KUO, H. C1 ; CHANG, Y. S1 ; HSEUH, T. H1 ; LAI, F. Y1 ; WANG, S. C1
[1] Institute of Electro-optical Engineering, National Chiao-Tung University, Hsin-Tsu, Taiwan, Province of China - Conference title
- State-of-the-art program on compound semiconductors XXXIX = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV (Orlando FL, 12-17 October 2003) (en)
- Conference name
- Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (4 ; Orlando FL 2003-10-12) = State-of-the-art program on compound semiconductors symposium (39 ; Orlando FL 2003-10-12)
- Author (monograph)
- Kopf, R.F (Editor); Baca, A.G (Editor); Pearton, S.J (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 26-32, 7 p ; ref : 9 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-391-1
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé quaternaire Composé ternaire Courant seuil Evaluation performance Fabrication microélectronique Gallium arséniure Gallium phosphure Indium arséniure Indium phosphure Laser cavité verticale Laser émission surface Mode transversal Méthode MOCVD Onde entretenue Oxydation Oxygène Puissance sortie As Ga In P Ga In P InGaAsP InGaP O
- Keyword (en)
- Quaternary compounds Ternary compounds Threshold current Performance evaluation Microelectronic fabrication Gallium arsenides Gallium phosphides Indium arsenides Indium phosphides Vertical cavity laser Surface emitting lasers Transverse mode MOCVD Continuous wave Oxidation Oxygen Output power
- Keyword (es)
- Fabricación microeléctrica Laser cavidad vertical Modo transversal Onda continua Potencia salida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546079
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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