Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16546176

Export

Selection :

Physics of electron injection-induced effects in III-nitrides

Author
CHERNYAK, Leonid1 ; BURDETT, William1
[1] University of Central Florida, Physics Department, Orlando, FL 32816, United States
Conference title
State-of-the-art program on compound semiconductors XXXVIII = Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003) (en)
Conference name
State of the art program on compound semiconductors (38 ; Paris 2003-04-27) = Symposium on wide bandgap semiconductors for photonic and electronic devices and sensors (4 ; Paris 2003-04-27)
Author (monograph)
Stokes, E.B (Editor); Fitch, R.C (Editor); Chang, P.C (Editor); Merfeld, D.W (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 208-213, 6 p ; ref : 14 ref

ISSN
0161-6374
ISBN
1-56677-349-0
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Composé III-V Composé binaire Diffusion porteur charge Electron Energie activation Gallium nitrure Injection porteur charge Injection électron Ionisation Longueur diffusion Matériau dopé Phénomène transport Porteur minoritaire Semiconducteur type p Superréseau Ga N GaN
Keyword (en)
III-V compound Binary compound Charge carrier scattering Electrons Activation energy Gallium nitride Charge carrier injection Electron injection Ionization Diffusion length Doped materials Transport process Minority carrier p type semiconductor Superlattice
Keyword (es)
Compuesto III-V Compuesto binario Difusión portador carga Electrón Energía activación Galio nitruro Inyección portador carga Inyección electrón Ionización Longitud difusión Fenómeno transporte Portador minoritario Semiconductor tipo p Superred
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546176

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web