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New metal gate architecture achieved by chemical vapor deposition for a complete tunnel fill

Author
REGNIER, C1 ; WACQUANT, F1 ; LEVERD, F1 ; HARRISON, S2 ; CORONEL, P1 ; TAVEL, B3 ; SKOTNICKI, T1
[1] STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France
[2] L2MP, 42 rue Jolliot Curie, 13384 Marseille, France
[3] Philips Semiconductors, 850 rue Jean Monnet, 38926 Crolles, France
Conference title
Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)
Conference name
International symposium on advanced short-time thermal processing for Si-based CMOS devices (Paris 2003-04-27)
Author (monograph)
Roozeboom, F (Editor); Gusev, E.P (Editor); Chen, L.J (Editor); Ozturk, M.C (Editor); Kwong, D.L (Editor); Timans, P.J (Editor)
Electrochemical Society, Electronics, Dielectric Science and technology, High Temperature Materials Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 391-396, 6 p ; ref : 8 ref

ISSN
0161-6374
ISBN
1-56677-396-2
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Dépôt chimique phase vapeur Fabrication microélectronique Flexibilité Polycristal Transistor GAA Trou interconnexion
Keyword (en)
Chemical vapor deposition Microelectronic fabrication Flexibility Polycrystal GAA transistor Via hole
Keyword (es)
Depósito químico fase vapor Fabricación microeléctrica Flexibilidad Policristal Transistor GAA Agujero interconexión
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546304

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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