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Fabrication, characterization and applications of AlInGaN light-emitting diodes

Author
CAO, X. A1 ; ARTHUR, S. D1 ; EBONG, A1 ; LEBOEUF, S. F1 ; MERFELD, D. W1
[1] Semiconductor Technology Lab, GE Research Center, Niskayuna, NY 12309, United States
Conference title
State-of-the-art program on compound semiconductors XXXIX = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV (Orlando FL, 12-17 October 2003) (en)
Conference name
Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (4 ; Orlando FL 2003-10-12) = State-of-the-art program on compound semiconductors symposium (39 ; Orlando FL 2003-10-12)
Author (monograph)
Kopf, R.F (Editor); Baca, A.G (Editor); Pearton, S.J (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 224-237, 14 p ; ref : 16 ref

ISSN
0161-6374
ISBN
1-56677-391-1
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium nitrure Caractéristique optique Composé quaternaire Conception circuit intégré Conception optimale Densité dislocation Densité élevée Diode électroluminescente Dispositif optoélectronique Etat actuel Fabrication microélectronique Gallium nitrure Indium nitrure Injection porteur charge Métallisation Propriété matériau Semiconducteur type p In
Keyword (en)
Aluminium nitride Optical characteristic Quaternary compound Integrated circuit design Optimal design Dislocation density High density Light emitting diode Optoelectronic device State of the art Microelectronic fabrication Gallium nitride Indium nitride Charge carrier injection Metallizing Properties of materials p type semiconductor
Keyword (es)
Aluminio nitruro Característica óptica Compuesto cuaternario Concepción optimal Densidad dislocación Densidad elevada Diodo electroluminescente Dispositivo optoelectrónico Estado actual Fabricación microeléctrica Galio nitruro Indio nitruro Inyección portador carga Metalización Propiedad material Semiconductor tipo p
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546405

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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