Fabrication, characterization and applications of AlInGaN light-emitting diodes
- Author
- CAO, X. A1 ; ARTHUR, S. D1 ; EBONG, A1 ; LEBOEUF, S. F1 ; MERFELD, D. W1
[1] Semiconductor Technology Lab, GE Research Center, Niskayuna, NY 12309, United States - Conference title
- State-of-the-art program on compound semiconductors XXXIX = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV (Orlando FL, 12-17 October 2003) (en)
- Conference name
- Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (4 ; Orlando FL 2003-10-12) = State-of-the-art program on compound semiconductors symposium (39 ; Orlando FL 2003-10-12)
- Author (monograph)
- Kopf, R.F (Editor); Baca, A.G (Editor); Pearton, S.J (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 224-237, 14 p ; ref : 16 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-391-1
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Caractéristique optique Composé quaternaire Conception circuit intégré Conception optimale Densité dislocation Densité élevée Diode électroluminescente Dispositif optoélectronique Etat actuel Fabrication microélectronique Gallium nitrure Indium nitrure Injection porteur charge Métallisation Propriété matériau Semiconducteur type p In
- Keyword (en)
- Aluminium nitride Optical characteristic Quaternary compound Integrated circuit design Optimal design Dislocation density High density Light emitting diode Optoelectronic device State of the art Microelectronic fabrication Gallium nitride Indium nitride Charge carrier injection Metallizing Properties of materials p type semiconductor
- Keyword (es)
- Aluminio nitruro Característica óptica Compuesto cuaternario Concepción optimal Densidad dislocación Densidad elevada Diodo electroluminescente Dispositivo optoelectrónico Estado actual Fabricación microeléctrica Galio nitruro Indio nitruro Inyección portador carga Metalización Propiedad material Semiconductor tipo p
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546405
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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