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Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer

Author
KOBAYASHI, Hikaru; KOBAYASHI, Takuya; ASANO, Akira; MAIDA, Osamu; TAKAHASHI, Masao
Institute of Scientific and Industrial Research, Osaka University, and CRES, Japan
Science and Technology Corporation, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
Conference title
Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)
Conference name
Symposium on silicon nitride and silicon dioxide thin insulating films (Paris 2003-04-28)
Author (monograph)
Sah, R.E (Editor); Deen, M.J (Editor); Landheer, D (Editor); Sundaram, K.B (Editor); Brown, W.D (Editor); Misra, D (Editor)
Electrochemical Society, Dielectric Science and Technology, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 199-210, 12 p ; ref : 30 ref

ISSN
0161-6374
ISBN
1-56677-347-4
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique électrique Cellule solaire Contact isolant semiconducteur Conversion énergie Couche oxyde Couche ultramince Courant fuite Densité courant Diode Dispositif optoélectronique Effet photoélectrique Etat interface Irradiation UV Rendement énergétique Structure cellulaire Taux conversion Traitement thermique
Keyword (en)
Electrical characteristic Solar cell Semiconductor insulator contact Energy conversion Oxide layer Ultrathin films Leakage current Current density Diode Optoelectronic device Photoelectric effect Interface state Ultraviolet irradiation Energetic efficiency Cell structure Conversion rate Heat treatment
Keyword (es)
Característica eléctrica Célula solar Contacto aislante semiconductor Conversión energética Capa óxido Corriente escape Densidad corriente Diodo Dispositivo optoelectrónico Estado interfase Irradiación UV Rendimiento energético Estructura celular Factor conversión Tratamiento térmico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546534

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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