Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer
- Author
- KOBAYASHI, Hikaru; KOBAYASHI, Takuya; ASANO, Akira; MAIDA, Osamu; TAKAHASHI, Masao
Institute of Scientific and Industrial Research, Osaka University, and CRES, Japan
Science and Technology Corporation, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan - Conference title
- Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)
- Conference name
- Symposium on silicon nitride and silicon dioxide thin insulating films (Paris 2003-04-28)
- Author (monograph)
- Sah, R.E (Editor); Deen, M.J (Editor); Landheer, D (Editor); Sundaram, K.B (Editor); Brown, W.D (Editor); Misra, D (Editor)
Electrochemical Society, Dielectric Science and Technology, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 199-210, 12 p ; ref : 30 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-347-4
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique électrique Cellule solaire Contact isolant semiconducteur Conversion énergie Couche oxyde Couche ultramince Courant fuite Densité courant Diode Dispositif optoélectronique Effet photoélectrique Etat interface Irradiation UV Rendement énergétique Structure cellulaire Taux conversion Traitement thermique
- Keyword (en)
- Electrical characteristic Solar cell Semiconductor insulator contact Energy conversion Oxide layer Ultrathin films Leakage current Current density Diode Optoelectronic device Photoelectric effect Interface state Ultraviolet irradiation Energetic efficiency Cell structure Conversion rate Heat treatment
- Keyword (es)
- Característica eléctrica Célula solar Contacto aislante semiconductor Conversión energética Capa óxido Corriente escape Densidad corriente Diodo Dispositivo optoelectrónico Estado interfase Irradiación UV Rendimiento energético Estructura celular Factor conversión Tratamiento térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546534
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:9:\"\u0000*\u0000jtitle\";s:37:\"Proceedings - Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:23:\"Proc., Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"199\";s:8:\"\u0000*\u0000epage\";s:3:\"210\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0161-6374\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KOBAYASHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Hikaru\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"KOBAYASHI, Takuya\";i:1;s:12:\"ASANO, Akira\";i:2;s:12:\"MAIDA, Osamu\";i:3;s:16:\"TAKAHASHI, Masao\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"1-56677-347-4\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)\";s:8:\"\u0000*\u0000title\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:8:\"\u0000*\u0000place\";s:13:\"Pennington NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:9:\"\u0000*\u0000jtitle\";s:37:\"Proceedings - Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:23:\"Proc., Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"199\";s:8:\"\u0000*\u0000epage\";s:3:\"210\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0161-6374\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KOBAYASHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Hikaru\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"KOBAYASHI, Takuya\";i:1;s:12:\"ASANO, Akira\";i:2;s:12:\"MAIDA, Osamu\";i:3;s:16:\"TAKAHASHI, Masao\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"1-56677-347-4\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)\";s:8:\"\u0000*\u0000title\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:8:\"\u0000*\u0000place\";s:13:\"Pennington NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:9:\"\u0000*\u0000jtitle\";s:37:\"Proceedings - Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:23:\"Proc., Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"199\";s:8:\"\u0000*\u0000epage\";s:3:\"210\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0161-6374\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KOBAYASHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Hikaru\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"KOBAYASHI, Takuya\";i:1;s:12:\"ASANO, Akira\";i:2;s:12:\"MAIDA, Osamu\";i:3;s:16:\"TAKAHASHI, Masao\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"1-56677-347-4\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)\";s:8:\"\u0000*\u0000title\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:8:\"\u0000*\u0000place\";s:13:\"Pennington NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:9:\"\u0000*\u0000jtitle\";s:37:\"Proceedings - Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:23:\"Proc., Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"199\";s:8:\"\u0000*\u0000epage\";s:3:\"210\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0161-6374\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KOBAYASHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Hikaru\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"KOBAYASHI, Takuya\";i:1;s:12:\"ASANO, Akira\";i:2;s:12:\"MAIDA, Osamu\";i:3;s:16:\"TAKAHASHI, Masao\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"1-56677-347-4\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)\";s:8:\"\u0000*\u0000title\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:8:\"\u0000*\u0000place\";s:13:\"Pennington NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:9:\"\u0000*\u0000jtitle\";s:37:\"Proceedings - Electrochemical Society\";s:9:\"\u0000*\u0000stitle\";s:23:\"Proc., Electrochem. Soc\";s:7:\"\u0000*\u0000date\";s:4:\"2003\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"199\";s:8:\"\u0000*\u0000epage\";s:3:\"210\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0161-6374\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"KOBAYASHI\";s:10:\"\u0000*\u0000aufirst\";s:6:\"Hikaru\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"KOBAYASHI, Takuya\";i:1;s:12:\"ASANO, Akira\";i:2;s:12:\"MAIDA, Osamu\";i:3;s:16:\"TAKAHASHI, Masao\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"1-56677-347-4\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:92:\"Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)\";s:8:\"\u0000*\u0000title\";s:108:\"Cyanide treatment to improve electrical characteristics of SI-based MOS diodes with an ultrathin oxide layer\";s:8:\"\u0000*\u0000place\";s:13:\"Pennington NJ\";s:6:\"\u0000*\u0000pub\";s:23:\"Electrochemical Society\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:2:\"12\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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