Pascal and Francis Bibliographic Databases

Help

Permanent link : http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16546900

Export

Selection :

Deep ultraviolet light emitting diodes using AlGaN quantum well active region

Author
ASIF KHAN, M1 ; SHATALOV, Maxim1 ; ADIVARAHAN, Vinod1 ; JAIN PING ZHANG1 ; CHITNIS, Ashay1 ; SIMIN, Grigory1 ; JINWEI YANG1
[1] Department of Electrical Engineering, University of South Carolina, Columbia, SC, 26208, United States
Conference title
State-of-the-art program on compound semiconductors XXXVIII = Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003) (en)
Conference name
State of the art program on compound semiconductors (38 ; Paris 2003-04-27) = Symposium on wide bandgap semiconductors for photonic and electronic devices and sensors (4 ; Paris 2003-04-27)
Author (monograph)
Stokes, E.B (Editor); Fitch, R.C (Editor); Chang, P.C (Editor); Merfeld, D.W (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 152-157, 6 p ; ref : 19 ref

ISSN
0161-6374
ISBN
1-56677-349-0
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Aluminium nitrure Aluminium oxyde Composé binaire Composé ternaire Diode électroluminescente Dislocation Epitaxie Gallium nitrure Hétérojonction Largeur raie Puissance sortie Puits quantique multiple Puits quantique Rayonnement UV extrême Rayonnement UV Région active Superréseau Température ambiante Al Ga N Al N AlGaN AlN Ga N GaN
Keyword (en)
Aluminium nitride Aluminium oxide Binary compound Ternary compound Light emitting diode Dislocation Epitaxy Gallium nitride Heterojunction Line width Output power Multiple quantum well Quantum well Vacuum ultraviolet radiation Ultraviolet radiation Active region Superlattice Room temperature
Keyword (es)
Aluminio nitruro Aluminio óxido Compuesto binario Compuesto ternario Diodo electroluminescente Dislocación Epitaxia Galio nitruro Heterounión Anchura raya espectral Potencia salida Pozo cuántico múltiple Pozo cuántico Radiación ultravioleta extrema Radiación ultravioleta Región activa Superred Temperatura ambiente
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546900

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web