Nitrogen content and interface trap reduction in SIO2/4H-SIC
- Author
- MCDONALD, K1 ; WELLER, R. A2 ; PANTELIDES, S. T1 ; FELDMAN, L. C1 ; CHUNG, G. Y3 ; TIN, C. C3 ; WILLIAMS, J. R3
[1] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
[2] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
[3] Physics Department, Auburn University, Auburn, Alabama 36849, United States - Conference title
- Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)
- Conference name
- Symposium on silicon nitride and silicon dioxide thin insulating films (Paris 2003-04-28)
- Author (monograph)
- Sah, R.E (Editor); Deen, M.J (Editor); Landheer, D (Editor); Sundaram, K.B (Editor); Brown, W.D (Editor); Misra, D (Editor)
Electrochemical Society, Dielectric Science and Technology, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 341-347, 7 p ; ref : 20 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-347-4
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bande conduction Densité état Etat interface Nitruration Passivation Piégeage porteur charge
- Keyword (en)
- Conduction band Density of states Interface state Nitriding Passivation Charge carrier trapping
- Keyword (es)
- Banda conducción Densidad estado Estado interfase Nitruración Pasivación Captura portador carga
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546925
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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