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Nitrogen content and interface trap reduction in SIO2/4H-SIC

Author
MCDONALD, K1 ; WELLER, R. A2 ; PANTELIDES, S. T1 ; FELDMAN, L. C1 ; CHUNG, G. Y3 ; TIN, C. C3 ; WILLIAMS, J. R3
[1] Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, United States
[2] Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235, United States
[3] Physics Department, Auburn University, Auburn, Alabama 36849, United States
Conference title
Silicon nitride and silicon dioxide thin insulating films VII (Paris, 28 April - 2 May 2003)
Conference name
Symposium on silicon nitride and silicon dioxide thin insulating films (Paris 2003-04-28)
Author (monograph)
Sah, R.E (Editor); Deen, M.J (Editor); Landheer, D (Editor); Sundaram, K.B (Editor); Brown, W.D (Editor); Misra, D (Editor)
Electrochemical Society, Dielectric Science and Technology, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 341-347, 7 p ; ref : 20 ref

ISSN
0161-6374
ISBN
1-56677-347-4
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Bande conduction Densité état Etat interface Nitruration Passivation Piégeage porteur charge
Keyword (en)
Conduction band Density of states Interface state Nitriding Passivation Charge carrier trapping
Keyword (es)
Banda conducción Densidad estado Estado interfase Nitruración Pasivación Captura portador carga
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546925

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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