High output power GaAs-based vertical external cavity surface emitting lasers achieved by AuIn2 solid liquid inter diffusion bonding
- Author
- DION, J1 ; SAGNES, I2 ; STRASSNER, M2 ; JACQUEMET, M3 ; GEORGES, P3 ; GARNACHE, A4
[1] CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France
[2] STMicroelectronics, 850 Rue Jean Monnet, 38926 Crolles, France
[3] Institut d'Optique - Centre scientifique d'Orsay Bât 503, 91403 Orsay, France
[4] CEM2 - Université Montpellier 2, Case 67, 34095 Montpellier, France - Conference title
- State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
- Conference name
- Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
- Author (monograph)
- Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2004, pp 177-181, 5 p ; ref : 4 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-419-5
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Cavité externe Comportement thermique Composant électronique Composé binaire Conductivité thermique Dispositif électrooptique Dissipation thermique Evaluation performance Gallium arséniure Laser émission surface Puissance sortie As Ga GaAs
- Keyword (en)
- External cavity Thermal behavior Electronic component Binary compounds Thermal conductivity Electro-optical devices Thermal dissipation Performance evaluation Gallium arsenides Surface emitting lasers Output power
- Keyword (es)
- Cavidad externa Comportamiento térmico Componente electrónico Disipación térmica Potencia salida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546956
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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