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Direction of excited carriers from low in facets of InGaN microcrystals observed in the highly spatially resolved cathodoluminescent images

Author
KANIE, H1 ; KOBAYASHI, S1
[1] Tokyo University of Science, Noda, Chiba, 278-8510, Japan
Conference title
State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
Conference name
Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
Author (monograph)
Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 529-534, 6 p ; ref : 7 ref

ISSN
0161-6374
ISBN
1-56677-419-5
Scientific domain
General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Cathodoluminescence Composé ternaire Gallium nitrure Indium nitrure Microcristal Microscopie électronique balayage Semiconducteur Température ambiante Ga In N InGaN
Keyword (en)
Cathodoluminescence Ternary compound Gallium nitride Indium nitride Microcrystal Scanning electron microscopy Semiconductor materials Room temperature
Keyword (es)
Catodoluminiscencia Compuesto ternario Galio nitruro Indio nitruro Microcristal Microscopía electrónica barrido Semiconductor(material) Temperatura ambiente
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546973

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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