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Planar GaN-based UV photodetectors formed by Si implantation

Author
CHEN, M. C1 ; SHEU, J. K2 ; LEE, M. L3 ; KAO, C. J4 ; TUN, C. J1 ; CHI, G. C1 4
[1] Institute of Optical Science, National Central University, Chung-Li 32054, Taiwan, Province of China
[2] Institute of Microelectronics and Department of Electrical Engineering National Cheng Kung University, Tainan 70101, Taiwan, Province of China
[3] Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan, Province of China
[4] Department of Physics, National Central University, Chung-Li 32054, Taiwan, Province of China
Conference title
State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
Conference name
Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
Author (monograph)
Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 522-528, 7 p ; ref : 11 ref

ISSN
0161-6374
ISBN
1-56677-419-5
Scientific domain
General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Composé binaire Courant obscurité Dispositif optoélectronique Détecteur UV Fonction réponse Gallium nitrure Jonction p n Photodiode couche intrinsèque Photodétecteur Profil dopage Réponse spectrale Réponse temporelle Silicium Technologie planaire Ga N GaN Si
Keyword (en)
Binary compound Dark current Optoelectronic device Ultraviolet detector Response function Gallium nitride p n junction p i n photodiodes Photodetector Doping profile Spectral response Time response Silicon Planar technology
Keyword (es)
Compuesto binario Corriente obscuridad Dispositivo optoelectrónico Detector UV Función respuesta Galio nitruro Unión p n Fotodetector Perfil doping Respuesta temporal Silicio Tecnología planar
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546974

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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