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Excimer laser annealing: A solution for the future technology nodes ?

Author
PRIVITERA, V1 ; LA MAGNA, A1 ; MANNINO, G1 ; FORTUNATO, G2 ; MARIUCCI, L2 ; SVENSSON, B. G3
[1] CNR-IMM, Stradale Primosole 50, 95121 Catania, Italy
[2] CNR-IFN, Roma, Italy
[3] University of Oslo, Norway
Conference title
Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)
Conference name
International symposium on advanced short-time thermal processing for Si-based CMOS devices (Paris 2003-04-27)
Author (monograph)
Roozeboom, F (Editor); Gusev, E.P (Editor); Chen, L.J (Editor); Ozturk, M.C (Editor); Kwong, D.L (Editor); Timans, P.J (Editor)
Electrochemical Society, Electronics, Dielectric Science and technology, High Temperature Materials Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2003, pp 137-143, 7 p ; ref : 8 ref

ISSN
0161-6374
ISBN
1-56677-396-2
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Fabrication microélectronique Irradiation laser Jonction peu profonde Laser excimère Modèle 2 dimensions Recuit faisceau laser
Keyword (en)
Microelectronic fabrication Laser irradiation Shallow junction Excimer lasers Two dimensional model Laser beam annealing
Keyword (es)
Fabricación microeléctrica Irradiación láser Unión poco profunda Modelo 2 dimensiones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16547066

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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