Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays
- Author
- YUN KI LEE1 ; BYONG SUN CHUN1 ; YOUNG KEUN KIM1 ; HWANG, Injun2 ; PARK, Wanjun2 ; KIM, Taewan2 ; KIM, Hongseog3 ; LEE, Jangeun4 ; JEONG, Won-Cheol4
[1] Division of Materials Science and Engineering, Korea University, Seoul 136-713, Korea, Republic of
[2] Samsung Advanced Institute of Technology, Suwon 440-600, Korea, Republic of
[3] Division of Information Technology, Paichai University, Daejeon 302-735, Korea, Republic of
[4] Samsung Electronics, Co., Ltd., Gyeonggi-Do 449-711, Korea, Republic of - Conference name
- Asia-Pacific Data Storage Conference (APDSC'04) (APDSC'04) (3 ; Taoyuan 2004-09-27)
- Source
IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 883-886, 4 p ; ref : 6 ref
- CODEN
- IEMGAQ
- ISSN
- 0018-9464
- Scientific domain
- Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Hard-axis field magnetoresistive random access memory (MRAM) remanent-state switching field thermal effect
- Keyword (fr)
- Commutation Mémoire accès direct
- Keyword (en)
- Switching Random-access storage
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A90 Other topics in materials science
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16548383
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1109/TMAG.2004.842079 
https://dx.doi.org/10.1109/TMAG.2004.842079
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TMAG.2004.842079\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:9:\"\u0000*\u0000jtitle\";s:30:\"IEEE transactions on magnetics\";s:9:\"\u0000*\u0000stitle\";s:16:\"IEEE trans. magn\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"41\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"883\";s:8:\"\u0000*\u0000epage\";s:3:\"886\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9464\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YUN KI LEE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:14:\"BYONG SUN CHUN\";i:1;s:14:\"YOUNG KEUN KIM\";i:2;s:12:\"HWANG, Injun\";i:3;s:12:\"PARK, Wanjun\";i:4;s:11:\"KIM, Taewan\";i:5;s:13:\"KIM, Hongseog\";i:6;s:12:\"LEE, Jangeun\";i:7;s:16:\"JEONG, Won-Cheol\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEMGAQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TMAG.2004.842079\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:9:\"\u0000*\u0000jtitle\";s:30:\"IEEE transactions on magnetics\";s:9:\"\u0000*\u0000stitle\";s:16:\"IEEE trans. magn\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"41\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"883\";s:8:\"\u0000*\u0000epage\";s:3:\"886\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9464\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YUN KI LEE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:14:\"BYONG SUN CHUN\";i:1;s:14:\"YOUNG KEUN KIM\";i:2;s:12:\"HWANG, Injun\";i:3;s:12:\"PARK, Wanjun\";i:4;s:11:\"KIM, Taewan\";i:5;s:13:\"KIM, Hongseog\";i:6;s:12:\"LEE, Jangeun\";i:7;s:16:\"JEONG, Won-Cheol\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEMGAQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TMAG.2004.842079\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TMAG.2004.842079\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:9:\"\u0000*\u0000jtitle\";s:30:\"IEEE transactions on magnetics\";s:9:\"\u0000*\u0000stitle\";s:16:\"IEEE trans. magn\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"41\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"883\";s:8:\"\u0000*\u0000epage\";s:3:\"886\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9464\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YUN KI LEE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:14:\"BYONG SUN CHUN\";i:1;s:14:\"YOUNG KEUN KIM\";i:2;s:12:\"HWANG, Injun\";i:3;s:12:\"PARK, Wanjun\";i:4;s:11:\"KIM, Taewan\";i:5;s:13:\"KIM, Hongseog\";i:6;s:12:\"LEE, Jangeun\";i:7;s:16:\"JEONG, Won-Cheol\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEMGAQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TMAG.2004.842079\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:9:\"\u0000*\u0000jtitle\";s:30:\"IEEE transactions on magnetics\";s:9:\"\u0000*\u0000stitle\";s:16:\"IEEE trans. magn\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"41\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"883\";s:8:\"\u0000*\u0000epage\";s:3:\"886\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9464\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YUN KI LEE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:14:\"BYONG SUN CHUN\";i:1;s:14:\"YOUNG KEUN KIM\";i:2;s:12:\"HWANG, Injun\";i:3;s:12:\"PARK, Wanjun\";i:4;s:11:\"KIM, Taewan\";i:5;s:13:\"KIM, Hongseog\";i:6;s:12:\"LEE, Jangeun\";i:7;s:16:\"JEONG, Won-Cheol\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEMGAQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TMAG.2004.842079\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:9:\"\u0000*\u0000jtitle\";s:30:\"IEEE transactions on magnetics\";s:9:\"\u0000*\u0000stitle\";s:16:\"IEEE trans. magn\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"41\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"883\";s:8:\"\u0000*\u0000epage\";s:3:\"886\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9464\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"YUN KI LEE\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:14:\"BYONG SUN CHUN\";i:1;s:14:\"YOUNG KEUN KIM\";i:2;s:12:\"HWANG, Injun\";i:3;s:12:\"PARK, Wanjun\";i:4;s:11:\"KIM, Taewan\";i:5;s:13:\"KIM, Hongseog\";i:6;s:12:\"LEE, Jangeun\";i:7;s:16:\"JEONG, Won-Cheol\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IEMGAQ\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:125:\"Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
