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Influence of freelayer in magnetic tunnel junction on switching of submicrometer magnetoresistive random access memory arrays

Author
YUN KI LEE1 ; BYONG SUN CHUN1 ; YOUNG KEUN KIM1 ; HWANG, Injun2 ; PARK, Wanjun2 ; KIM, Taewan2 ; KIM, Hongseog3 ; LEE, Jangeun4 ; JEONG, Won-Cheol4
[1] Division of Materials Science and Engineering, Korea University, Seoul 136-713, Korea, Republic of
[2] Samsung Advanced Institute of Technology, Suwon 440-600, Korea, Republic of
[3] Division of Information Technology, Paichai University, Daejeon 302-735, Korea, Republic of
[4] Samsung Electronics, Co., Ltd., Gyeonggi-Do 449-711, Korea, Republic of
Conference name
Asia-Pacific Data Storage Conference (APDSC'04) (APDSC'04) (3 ; Taoyuan 2004-09-27)
Source

IEEE transactions on magnetics. 2005, Vol 41, Num 2, pp 883-886, 4 p ; ref : 6 ref

CODEN
IEMGAQ
ISSN
0018-9464
Scientific domain
Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Author keyword
Hard-axis field magnetoresistive random access memory (MRAM) remanent-state switching field thermal effect
Keyword (fr)
Commutation Mémoire accès direct
Keyword (en)
Switching Random-access storage
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A90 Other topics in materials science

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16548383

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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