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Effects of sputtering power on the properties of ZnO:Ga films deposited by r.f. magnetron-sputtering at low temperature

Author
XUHU YU1 ; JIN MA1 ; FENG JI1 ; YUHENG WANG1 ; XIJIAN ZHANG1 ; CHUANFU CHENG2 ; HONGLEI MA1
[1] School of Physics and Microelectronics, Shandong University, Jinan 250100, China
[2] Physics Department, Shandong Normal University, Jinan 250014, China
Source

Journal of crystal growth. 2005, Vol 274, Num 3-4, pp 474-479, 6 p ; ref : 19 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
68.55.Gi 73.60.Cs 78.30.Fs A3. Magnetron sputtering A3. ZnO:Ga films B2. Electrical and optical properties
Keyword (fr)
Addition gallium Composé binaire Conductivité électrique Couche mince Croissance cristalline en phase vapeur Diffraction RX Dopage Etude expérimentale Facteur transmission Magnétron Microscopie force atomique Mobilité Hall Orientation préférentielle Polycristal Pulvérisation haute fréquence Réseau hexagonal Résistivité couche Structure wurtzite Zinc oxyde O Zn Substrat verre ZnO Composé minéral Métal transition composé
Keyword (en)
Gallium additions Binary compounds Electrical conductivity Thin films Crystal growth from vapors XRD Doping Experimental study Transmittance Magnetrons Atomic force microscopy Hall mobility Preferred orientation Polycrystals Radiofrequency sputtering Hexagonal lattices Sheet resistivity Wurtzite structure Zinc oxides Inorganic compounds Transition element compounds
Keyword (es)
Doping Factor transmisión Orientación preferencial Pulverización alta frecuencia Estructura wurtzita
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Pacs
6855J Structure and morphology; thickness

Pacs
8115C Deposition by sputtering

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16568735

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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