Pump-probe analysis of polaron decay in InAs/GaAs self-assembled quantum dots
- Author
- BRAS, F1 ; SAUVAGE, S1 ; BOUCAUD, P1 ; ORTEGA, J.-M2 ; GERARD, J.-M3
[1] Institut d'Électronique Fondamentale, UMR CNRS 8622, Bâtiment 220, University Paris-Sud, 91405 Orsay, France
[2] CLIO-Lure, Batiment 209 D, Université Paris Sud, 91405 Orsay, France
[3] CEA-Grenoble, DRFMC-PSC, 38054 Grenoble, France - Source
Semiconductor science and technology. 2005, Vol 20, Num 3, pp L10-L13 ; ref : 14 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Composé minéral Couche autoassemblée Couplage fort Densité Dopage Gallium arséniure Indium arséniure Interaction électron phonon Phonon Point quantique Polaron Semiconducteur Spectrométrie pompe sonde As Ga As In GaAs InAs
- Keyword (en)
- Binary compounds Inorganic compounds Self-assembled layers Strong coupling Density Doping Gallium arsenides Indium arsenides Electron-phonon interactions Phonons Quantum dots Polarons Semiconductor materials Pump probe spectrometry
- Keyword (es)
- Acoplamiento fuerte Doping Espectrometría bomba sonda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Discipline
- Electronics Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16582972
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/20/3/L03 
https://dx.doi.org/10.1088/0268-1242/20/3/L03
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