New types of defects in SiC grown by the PVT method
- Author
- ZHU, L. N1 ; HEQING LI1 ; HU, B. Q1 ; WU, X1 ; CHEN, X. L1
[1] Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080, China - Source
Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 10, pp L85-L91 ; ref : 31 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Composé minéral Croissance cristalline en phase vapeur Défaut Microscopie optique Microscopie électronique balayage Silicium carbure 6172D C Si SiC
- Keyword (en)
- Chemical etching Inorganic compounds Crystal growth from vapors Defects Optical microscopy Scanning electron microscopy Silicon carbides
- Keyword (es)
- Ataque químico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72D Experimental determination of defects by diffraction and scattering
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16583434
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/17/10/L01 
https://dx.doi.org/10.1088/0953-8984/17/10/L01
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