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Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure

Author
IZUMI, S1 ; MIYAKE, T2 ; SAKAI, S1 ; OHTA, H3
[1] The University of Tokyo, School of Engineering, Department of Mechanical Engineering, 7-3-1, Bunkyo-ku, Hongo, Tokyo, 113-8656, Japan
[2] Automotive Systems, Hitachi Ltd., Takaba 2520, Hitachinaka, Ibaraki, 312-8503, Japan
[3] Mechanical Engineering Research Laboratory, Hitachi Ltd., Kandatsu 502, Tsuchiura, Ibaraki, 300-0013, Japan
Source

Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2005, Vol 395, Num 1-2, pp 62-69, 8 p ; ref : 29 ref

ISSN
0921-5093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Computational mechanics Dislocation dynamics Process simulations Semiconductor devices Silicon
Keyword (fr)
Dislocation Echelle nanométrique Effet contrainte Germination dislocation Microscopie électronique transmission Méthode élément fini Semiconducteur Silicium Système glissement 6172L Si
Keyword (en)
Dislocations Nanometer scale Stress effects Dislocation nucleation Transmission electron microscopy Finite element method Semiconductor materials Silicon Slip system
Keyword (es)
Sistema deslizamiento
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16597982

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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