AlGaN-GaN double-channel HEMTs
- Author
- RONGMING CHU1 ; YUGANG ZHOU1 ; JIE LIU1 ; DELIANG WANG1 ; CHEN, Kevin J1 ; KEI MAY LAU1
[1] Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Kowloon, Hong-Kong - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 438-446, 9 p ; ref : 28 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- AlGaN GaN current collapse double-channel high-electron mobility transistor (HEMT) power amplifier
- Keyword (fr)
- Amplificateur puissance Caractéristique courant tension Couche barrière Courant intense Endommagement Extraction paramètre Gain Mesure dynamique Multicouche Régime signal faible Régime signal fort Résistance parasite Transistor mobilité électron élevée
- Keyword (en)
- Power amplifier Voltage current curve Barrier layer High strength current Damaging Parameter extraction Gain Dynamic measurement Multiple layer Small signal behavior Large signal behavior Parasitic resistance High electron mobility transistor
- Keyword (es)
- Amplificador potencia Característica corriente tensión Corriente intensa Deterioración Extracción parámetro Ganancia Medición dinamica Capa múltiple Régimen señal débil Régimen señal fuerte Resistencia parásita Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A2 Amplifiers
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16610398
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.844791 
https://dx.doi.org/10.1109/TED.2005.844791
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