On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors
- Author
- POLSKY, Boris1 ; PENZIN, Oleg1 ; EL SAYED, Karim1 ; SCHENK, Andreas2 ; WETTSTEIN, Andreas3 ; FICHTNER, Wolfgang1
[1] Synopsys Inc., Mountain View, CA 94043, United States
[2] Institut für Integrierte Systeme, ETH Zürich, 8092 Zürich, Switzerland
[3] Synopsys Switzerland Ltd., 8050 Zurich, Switzerland - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 500-506, 7 p ; ref : 18 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- MOS devices Modeling Simulation software silicon-on-insulator (SOI) technology
- Keyword (fr)
- Conductivité différentielle négative Couche appauvrissement Effet tunnel Logiciel Modélisation Processus recombinaison Structure MOS Technologie silicium sur isolant Transistor MOSFET
- Keyword (en)
- Negative differential conductivity Depletion layer Tunnel effect Software Modeling Recombination process MOS structure Silicon on insulator technology MOSFET
- Keyword (es)
- Conductividad diferencial negativa Capa empobrecimiento Efecto túnel Logicial Modelización Proceso recombinación Estructura MOS Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16610405
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.845074 
https://dx.doi.org/10.1109/TED.2005.845074
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