Numerical analysis of deep-trap behaviors on retention time distribution of drams with negative wordline bias
- Author
- YI, Jeong-Hyong1 ; PARK, Sung-Kye1 ; PARK, Young-June2 ; MIN, Hong Shick1
[1] Physical Electronics Laboratory, School of Electrical Engineering and Computer Science and NSI-NCRC, Seoul National University, Seoul 151-742, Korea, Republic of
[2] Device and Process Integration Technology Team, Memory R&D Division Hynix Semiconductor Inc., Ichon, Kyoungki 467-701, Korea, Republic of - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 554-560, 7 p ; ref : 20 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Activation energy gate-induced drain leakage (GIDL) negative wordline retention time tail distribution trap-assisted tunneling (TAT)
- Keyword (fr)
- Champ électrique Circuit intégré Courant fuite Effet tunnel Energie activation Facteur rétention Modèle 2 dimensions Mémoire accès direct dynamique Mémoire accès direct Méthode numérique Piégeage porteur charge Transistor
- Keyword (en)
- Electric field Integrated circuit Leakage current Tunnel effect Activation energy Retention factor Two dimensional model Dynamic random access memory Random access memory Numerical method Charge carrier trapping Transistor
- Keyword (es)
- Campo eléctrico Circuito integrado Corriente escape Efecto túnel Energía activación Factor retención Modelo 2 dimensiones Memoria acceso directo Método numérico Captura portador carga Transistor
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16610413
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.845151 
https://dx.doi.org/10.1109/TED.2005.845151
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