Quantum-based simulation analysis of scaling in ultrathin body device structures
- Author
- KUMAR, Arvind1 ; KEDZIERSKI, Jakub1 ; LAUX, Steven E1
[1] IBM Semiconductor Research and Development Center (SRDC), T. J. Watson Research Center, Yorktown Heights, NY 10598, United States - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 614-617, 4 p ; ref : 11 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- MOSFET scaling Modeling silicon-on-insulator (SOI) technology
- Keyword (fr)
- Autocohérence Canal court Confinement Couche appauvrissement Couche ultramince Effet quantique Modèle 2 dimensions Modélisation Profil dopage Technologie silicium sur isolant Transistor MOSFET
- Keyword (en)
- Self consistency Short channel Confinement Depletion layer Ultrathin films Quantum effect Two dimensional model Modeling Doping profile Silicon on insulator technology MOSFET
- Keyword (es)
- Autocoherencia Canal corto Confinamiento Capa empobrecimiento Efecto cuántico Modelo 2 dimensiones Modelización Perfil doping Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16610421
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.844792 
https://dx.doi.org/10.1109/TED.2005.844792
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