C60 single domain growth on indium phosphide and its reaction with atomic hydrogen
- Author
- EREMTCHENKO, M1 ; DÖRING, S1 ; TEMIROV, R1 ; SCHAEFER, J. A1
[1] Institut für Physik und Zentrum für Mikro- und Nanotechnologien, Technische Universität Ilmenau, P.O. Box 100565, 98684 Ilmenau, Germany - Source
Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 4, pp 045410.1-045410.10 ; ref : 48 ref
- ISSN
- 1098-0121
- Scientific domain
- Metallurgy, welding; Condensed state physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dépôt sous vide Fullerènes Gravure Indium phosphure Microscopie tunnel balayage Mécanisme croissance Spectre perte énergie électron Structure domaine Structure îlot Traitement surface 8115 C60
- Keyword (en)
- Vacuum deposition Fullerenes Etching Indium phosphides Scanning tunneling microscopy Growth mechanism Electron energy loss spectra Domain structure Island structure Surface treatments
- Keyword (es)
- Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16617599
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.71.045410 
https://dx.doi.org/10.1103/PhysRevB.71.045410
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