Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=1662223

Development of a continuous-flow system for the growth of compound semiconductor thin films via electrochemical atomic layer epitaxy

Author
VILLEGAS, I1 ; NAPOLITANO, P1
[1] Department of Chemistry, The University of New Mexico, Albuquerque, New Mexico 87131-1096, United States
Source

Journal of the Electrochemical Society. 1999, Vol 146, Num 1, pp 117-124 ; ref : 14 ref

CODEN
JESOAN
ISSN
0013-4651
Scientific domain
General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
Publisher
Electrochemical Society, Pennington, NJ
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Cadmium Tellurure Chronoampérométrie Couche mince Diffraction RX Dépôt électrolytique Electrode Etude expérimentale Microscopie électronique balayage Microscopie électronique transmission Morphologie Méthode couche atomique Méthode flux continu Or Réaction électrochimique Semiconducteur Solution acide Structure surface Sulfurique acide Métal transition
Keyword (en)
Cadmium Tellurides Chronoamperometry Thin film X ray diffraction Electrodeposition Electrodes Experimental study Scanning electron microscopy Transmission electron microscopy Morphology Atomic layer method Continuous flow method Gold Electrochemical reaction Semiconductor materials Acidic solution Surface structure Sulfuric acid Transition metal
Keyword (es)
Cadmio Telururo Cronoamperimetría Capa fina Difracción RX Depósito electrolítico Electrodo Estudio experimental Microscopía electrónica barrido Microscopía electrónica transmisión Morfología Método capa atómica Método flujo contínuo Oro Reacción electroquímica Semiconductor(material) Solución ácida Estructura superficie Sulfúrico ácido Metal transición
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15P Electrodeposition, electroplating

Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry / 001C01H04 Study of interfaces / 001C01H04A Electrodeposition

Pacs
8115P Electrodeposition, electroplating

Discipline
General chemistry and physical chemistry Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1662223

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Access to the document

Searching the Web