Electrochemical deposition and characterization of wide band semiconductor ZnO thin film
- Author
- JIAN WENG1 ; YONGJUN ZHANG1 2 ; GUANQI HAN1 ; YU ZHANG1 ; LING XU1 ; JUN XU1 ; XINFAN HUANG1 ; KUNJI CHEN1
[1] National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China
[2] Institute of Solid State Physics of JiLin Normal University, SiPing JiLin 136000, China - Source
Thin solid films. 2005, Vol 478, Num 1-2, pp 25-29, 5 p ; ref : 13 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Couche mince Croissance cristalline en solution Diffraction RX Diffraction électron Dépôt électrolytique Etude expérimentale Facteur transmission Grosseur grain Microscopie force atomique Morphologie Polycristal Recuit Réseau hexagonal Semiconducteur II-VI Solution aqueuse Structure wurtzite Zinc oxyde O Zn Substrat verre ZnO Composé minéral Métal transition composé
- Keyword (en)
- Binary compounds Thin films Crystal growth from solutions XRD Electron diffraction Electrodeposition Experimental study Transmittance Grain size Atomic force microscopy Morphology Polycrystals Annealing Hexagonal lattices II-VI semiconductors Aqueous solutions Wurtzite structure Zinc oxides Inorganic compounds Transition element compounds
- Keyword (es)
- Factor transmisión Estructura wurtzita
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15P Electrodeposition, electroplating
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16627273
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2004.09.047 
https://dx.doi.org/10.1016/j.tsf.2004.09.047
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