Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure
- Author
- YILDIRIM, Tacettin1 ; GÜR, Emre1 ; TÜZEMEN, S1 ; BILGIN, V2 ; KÖSE, S2 ; ATAY, F2 ; AKYÜZ, I2
[1] Department of Physics, Ataturk University, 25240 Erzurum, Turkey
[2] Department of Physics, Osmangazi University, 26480 Eskişehir, Turkey - Source
Physica. E, low-dimentional systems and nanostructures. 2005, Vol 27, Num 1-2, pp 290-295, 6 p ; ref : 16 ref
- ISSN
- 1386-9477
- Scientific domain
- Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 78.20.-e Wide-bandgap films; Absorption; ZnO SnO2 and ternary oxides
- Keyword (fr)
- Bande interdite Composé minéral Composé ternaire Confinement Couche mince Dépôt projection Hauteur barrière Laser puits quantique Métal transition composé Polycristal Puits quantique Semiconducteur bande interdite large Superréseau Titane nitrure Zinc oxyde 4255P O Zn ZnO
- Keyword (en)
- Energy gap Inorganic compounds Ternary compounds Confinement Thin films Spray coatings Barrier height Quantum well lasers Transition element compounds Polycrystals Quantum wells Wide band gap semiconductors Superlattices Titanium nitrides Zinc oxides
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16632833
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.physe.2004.12.007 
https://dx.doi.org/10.1016/j.physe.2004.12.007
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physe.2004.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Physica. E, low-dimentional systems and nanostructures\";s:9:\"\u0000*\u0000stitle\";s:40:\"Physica ( E) low-dimens. syst. nanostrut\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"27\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:3:\"290\";s:8:\"\u0000*\u0000epage\";s:3:\"295\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1386-9477\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YILDIRIM\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tacettin\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"G\u00dcR, Emre\";i:1;s:11:\"T\u00dcZEMEN, S\";i:2;s:9:\"BILGIN, V\";i:3;s:8:\"K\u00d6SE, S\";i:4;s:7:\"ATAY, F\";i:5;s:9:\"AKY\u00dcZ, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physe.2004.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Physica. E, low-dimentional systems and nanostructures\";s:9:\"\u0000*\u0000stitle\";s:40:\"Physica ( E) low-dimens. syst. nanostrut\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"27\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:3:\"290\";s:8:\"\u0000*\u0000epage\";s:3:\"295\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1386-9477\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YILDIRIM\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tacettin\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"G\u00dcR, Emre\";i:1;s:11:\"T\u00dcZEMEN, S\";i:2;s:9:\"BILGIN, V\";i:3;s:8:\"K\u00d6SE, S\";i:4;s:7:\"ATAY, F\";i:5;s:9:\"AKY\u00dcZ, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physe.2004.12.007\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physe.2004.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Physica. E, low-dimentional systems and nanostructures\";s:9:\"\u0000*\u0000stitle\";s:40:\"Physica ( E) low-dimens. syst. nanostrut\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"27\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:3:\"290\";s:8:\"\u0000*\u0000epage\";s:3:\"295\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1386-9477\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YILDIRIM\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tacettin\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"G\u00dcR, Emre\";i:1;s:11:\"T\u00dcZEMEN, S\";i:2;s:9:\"BILGIN, V\";i:3;s:8:\"K\u00d6SE, S\";i:4;s:7:\"ATAY, F\";i:5;s:9:\"AKY\u00dcZ, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:27:\"10.1016\/j.physe.2004.12.007\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Physica. E, low-dimentional systems and nanostructures\";s:9:\"\u0000*\u0000stitle\";s:40:\"Physica ( E) low-dimens. syst. nanostrut\";s:7:\"\u0000*\u0000date\";s:4:\"2005\";s:9:\"\u0000*\u0000volume\";s:2:\"27\";s:8:\"\u0000*\u0000issue\";s:3:\"1-2\";s:8:\"\u0000*\u0000spage\";s:3:\"290\";s:8:\"\u0000*\u0000epage\";s:3:\"295\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"1386-9477\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YILDIRIM\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Tacettin\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:10:\"G\u00dcR, Emre\";i:1;s:11:\"T\u00dcZEMEN, S\";i:2;s:9:\"BILGIN, V\";i:3;s:8:\"K\u00d6SE, S\";i:4;s:7:\"ATAY, F\";i:5;s:9:\"AKY\u00dcZ, I\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:124:\"Wide-bandgap modification of polycrystalline ZnO using Sn component on the basis of developing quantum-well hetero-structure\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"6\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
