On the morphological instability of silicon/silicon dioxide nanowires
- Author
- KOLB, F. M1 ; HOFMEISTER, H1 ; ZACHARIAS, M1 ; GÖSELE, U1
[1] Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Saale), Germany - Source
Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 7, pp 1405-1408, 4 p ; ref : 13 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dépôt phase vapeur Epaisseur Gravure Instabilité Microscopie électronique balayage Microscopie électronique transmission Mécanisme croissance Nanofil Oscillation Oxydation Silicium oxyde Silicium Instabilité Rayleigh Structure coeur couche
- Keyword (en)
- Vapor deposition Thickness Etching Instability Scanning electron microscopy Transmission electron microscopy Growth mechanism Nanowires Oscillations Oxidation Silicon oxides Silicon Core shell structure
- Keyword (es)
- Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16633783
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s00339-004-3188-7 
https://dx.doi.org/10.1007/s00339-004-3188-7
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