Synthesis of GaP nanowires with Ga2O3 coating
- Author
- LIU, B. D1 2 ; BANDO, Y1 2 ; TANG, C. C2 ; XU, F. F2
[1] Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-0005, Japan
[2] Advanced Materials Laboratory, National Institute for Materials Science, Narniki 1-1, Tsukuba, Ibaraki 305-0044, Japan - Source
Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 7, pp 1585-1588, 4 p ; ref : 14 ref
- ISSN
- 0947-8396
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Springer, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffraction électron Dimension Gallium oxyde Gallium phosphure Microscopie électronique balayage Microscopie électronique transmission Nanofil Orientation préférentielle Revêtement Réseau cubique face centrée Semiconducteur Structure blende Synthèse Technologie poudre Composé minéral
- Keyword (en)
- Electron diffraction Dimensions Gallium oxides Gallium phosphides Scanning electron microscopy Transmission electron microscopy Nanowires Preferred orientation Coatings FCC lattices Semiconductor materials Blende structure Synthesis Powder technology Inorganic compounds
- Keyword (es)
- Orientación preferencial Estructura blenda
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A16 Methods of nanofabrication
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16633814
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s00339-004-3006-2 
https://dx.doi.org/10.1007/s00339-004-3006-2
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