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On the optical properties and microstructures of GaN films inserted with low-temperature Al0.8Ga0.2N interlayers

Author
SHIH, Bing-Hong1 ; GONG, Jyh-Rong2 ; LIN, Shih-Wei3 ; TSAI, Yu-Li3 ; LIAO, Wei-Tsai3 ; LIN, Tai-Yuan4 ; LEE, Ying-Te1 ; CHANG, Jin-Gor1
[1] Institute of Optical Physics, Feng Chia University, Taichung 407, Taiwan, Province of China
[2] Institute of Opto-Mechatronics, National Chung Cheng University, Minghsiung, Chiayi 621, Taiwan, Province of China
[3] Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan, Province of China
[4] Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 202, Taiwan, Province of China
Source

Journal of crystal growth. 2005, Vol 276, Num 3-4, pp 362-366, 5 p ; ref : 14 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
61.72.Ef 81.05.Ea Al. Characterization 81.15.Tv B1. Nitrides B2. Semiconducting gallium compounds
Keyword (fr)
Composé binaire Couche intermédiaire Couche épaisse Dislocation Effet dimensionnel Epaisseur Etude expérimentale Gallium nitrure Haute température Microscopie optique Microscopie électronique transmission Microstructure Morphologie Photoluminescence Semiconducteur III-V Ga N GaN Substrat Al2O3 Composé minéral
Keyword (en)
Binary compounds Interlayers Thick films Dislocations Size effect Thickness Experimental study Gallium nitrides High temperature Optical microscopy Transmission electron microscopy Microstructure Morphology Photoluminescence III-V semiconductors Inorganic compounds
Keyword (es)
Alta temperatura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors

Pacs
6172L Linear defects: dislocations, disclinations

Pacs
7855C III-V semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16654247

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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