Preparation and characterization of low pressure chemically vapor deposited silicon nitride thin films from tris(diethylamino)chlorosilane and ammonia
- Author
- LIU, Xue-Jian1 ; CHEN, Yao-Feng2 ; LI, Hui-Li1 ; SUN, Xing-Wei1 ; HUANG, Li-Ping1
[1] Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
[2] Department of Chemistry, University of California, Santa Barbara, CA 93106, United States - Source
Thin solid films. 2005, Vol 479, Num 1-2, pp 137-143, 7 p ; ref : 26 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- Characterization Liquid precursor Low pressure chemical vapor deposition Silicon nitride
- Keyword (fr)
- Cinétique Composition chimique Composé binaire Couche mince Dépendance température Dépôt chimique phase vapeur Effet pression Etude expérimentale Impureté Matériau amorphe Méthode phase vapeur Préparation Silicium nitrure Spectre IR Spectre photoélectron RX Spectrométrie Auger Topographie N Si SiNx Substrat Si Composé minéral
- Keyword (en)
- Kinetics Chemical composition Binary compounds Thin films Temperature dependence CVD Pressure effects Experimental study Impurities Amorphous material Growth from vapor Preparation Silicon nitrides Infrared spectra X-ray photoelectron spectra AES Topography Inorganic compounds
- Keyword (es)
- Material amorfo Método fase vapor Preparación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16684671
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2004.11.201 
https://dx.doi.org/10.1016/j.tsf.2004.11.201
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