High-current AlInN/GaN field effect transistors
- Author
- DADGAR, A1 ; NEUBURGER, M2 ; KOHN, E2 ; KROST, A1 ; SCHULZE, F1 ; BLÄSING, J1 ; KRTSCHIL, A1 ; DAUMILLER, I3 ; KUNZE, M3 ; GÜNTHER, K.-M1 ; WITTE, H1 ; DIEZ, A1
[1] Otto-von-Guericke-Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Universitätsplatz 2, 39106 Magdeburg, Germany
[2] University Ulm, Department of Electron Devices and Circuits, Albert-Einstein-Allee 45, 89081 Ulm, Germany
[3] MicroGaN GmbH, Albert-Einstein-Allee 45, 89081 Ulm, Germany - Conference name
- Internatyional Workshop on Nitride Semiconductors (IWN 2004) (IWN 2004) (Pittsburgh, Pennsylvania 2004-07-19)
- Source
Physica status solidi. A. Applied research. 2005, Vol 202, Num 5, pp 832-836, 5 p ; ref : 12 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Accommodation réseau Caractéristique capacité tension Composé minéral Contrainte compression Couche contrainte Densité porteur charge Densité électron Effet Hall Epitaxie phase vapeur Gallium nitrure Polarisation Semiconducteur Silicium Transistor effet champ Tôle 8530T Ga N GaN Si
- Keyword (en)
- Mismatch lattice CV characteristic Inorganic compounds Compressive stress Strained layer Carrier density Electron density Hall effect VPE Gallium nitrides Polarization Semiconductor materials Silicon Field effect transistors Sheets
- Keyword (es)
- Acomodación red Tensión compresión Capa forzada
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16697748
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.200461466 
https://dx.doi.org/10.1002/pssa.200461466
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