Properties of LT-AlGaN films and HT-GaN films using LT-ALGaN buffer layers grown on (0001) sapphire substrates
- Author
- WANG, Cheng-Liang1 ; GONG, Jyh-Rong1
[1] Department of Materials Science and Engineering, Feng Chia University, Taichung 407, Taiwan, Province of China - Source
Journal of materials science. Materials in electronics. 2005, Vol 16, Num 2, pp 107-110, 4 p ; ref : 15 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Composé minéral Composé ternaire Couche mince Couche tampon Diffraction RX Défaut Gallium nitrure Haute température Lumière jaune Microscopie optique Microscopie électronique transmission Microstructure Optimisation Photoluminescence Surface lisse Al Ga N AlGaN Ga N GaN
- Keyword (en)
- Aluminium nitrides Binary compounds Inorganic compounds Ternary compounds Thin films Buffer layer XRD Defects Gallium nitrides High temperature Yellow light Optical microscopy Transmission electron microscopy Microstructure Optimization Photoluminescence Smooth surface
- Keyword (es)
- Capa tampón Alta temperatura Luz amarilla Superficie lisa
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16734707
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-005-6459-y 
https://dx.doi.org/10.1007/s10854-005-6459-y
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