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Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented si substrate toward UV-detector applications

Author
KOIKE, Kazuto1 2 ; HAMA, Kenji1 ; NAKASHIMA, Ippei1 ; TAKADA, Gen-You1 ; OGATA, Ken-Ichi2 ; SASA, Shigehiko1 2 ; INOUE, Masataka1 2 ; YANO, Mitsuaki1 2
[1] New Materials Research Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
[2] Bio Venture Center, Osaka Institute of Technology, Asahi-ku, Ohmiya, Osaka 535-8585, Japan
Conference title
MBE XIII, 2004: 13th International Conference on Molecular Beam Epitaxy, Edinburgh, UK, 22-27 August 2004
Conference name
MBE-XIII: International Conference on Molecular Beam Epitaxy (13 ; Edinburgh 2004-08-22)
Author (monograph)
JONES, Tim S (Editor)1
[1] Centre for Electronic Materials and Devices, Imperial College London, South Kensington, London, SW7 2AY, United Kingdom
Source

Journal of crystal growth. 2005, Vol 278, Num 1-4, pp 288-292, 5 p ; ref : 11 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
73.50.Pz A1. Photoresponsivity 73.61.Ga 81.15.Hi 85.60.Gz A3. Molecular beam epitaxy B3. Ultra-violet photodetector Bl. ZnMgO Bl. ZnO
Keyword (fr)
Cathodoluminescence Composé ternaire Couche mince Croissance cristalline en phase vapeur Diffraction RX Détecteur UV Epitaxie jet moléculaire Etude expérimentale Magnésium oxyde Photodétecteur Semiconducteur bande interdite large Zinc oxyde Mg O Zn Substrat Si Zn1-xMgxO Composé minéral Métal transition composé
Keyword (en)
Cathodoluminescence Ternary compounds Thin films Crystal growth from vapors XRD Ultraviolet detectors Molecular beam epitaxy Experimental study Magnesium oxides Photodetectors Wide band gap semiconductors Zinc oxides Inorganic compounds Transition element compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Pacs
8115H Molecular, atomic, ion, and chemical beam epitaxy

Pacs
8560G Photodetectors (including infrared and CCD detectors)

Discipline
Electronics Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16748024

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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