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Synthesis of silicon dioxide film using high-concentration ozone and evaluation of the film quality

Author
KOIKE, Kunihiko1 ; IZUMI, Koichi1 ; NAKAMURA, Sadaki1 ; INOUE, Goichi1 ; KUROKAWA, Akira2 ; ICHIMURA, Shingo2
[1] Iwatani International Corporation, Shiga 524-0041, Japan
[2] National Institute of Advanced Industrial Science and Technology, Ibaraki 305-8568, Japan
Source

Journal of electronic materials. 2005, Vol 34, Num 3, pp 240-247, 8 p ; ref : 23 ref

CODEN
JECMA5
ISSN
0361-5235
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Si ozone silicon dioxide
Keyword (fr)
Composé binaire Contrainte compression Couche mince Diffusion Dépendance temps Dépendance température Energie activation Epaisseur Etude expérimentale Oxydation Ozone Silicium oxyde Spectre IR Spectre photoélectron RX Spectre transformée Fourier Traitement par plasma O Si SiO2 Substrat Si Composé minéral
Keyword (en)
Binary compounds Compressive stress Thin films Scattering Time dependence Temperature dependence Activation energy Thickness Experimental study Oxidation Ozone Silicon oxides Infrared spectra X-ray photoelectron spectra Fourier transform spectra Plasma assisted processing Inorganic compounds
Keyword (es)
Tensión compresión
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments

Pacs
6855J Structure and morphology; thickness

Pacs
8165M Oxidation

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16756333

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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